Spatiotemporal evolution of stress field during direct laser deposition of multilayer thin wall of Ti-6Al-4V

Ivanov, S., Artinov, A., Zemlyakov, E., Karpov, I., Rylov, S., Em, V.

(2022) Materials, 15 (1), статья № 263.

КРАТКОЕ ОПИСАНИЕ: The present work seeks to extend the level of understanding of the stress field evolution during direct laser deposition (DLD) of a 3.2 mm thick multilayer wall of Ti-6Al-4V alloy by theoretical and experimental studies. The process conditions were close to the conditions used to produce large-sized structures by the DLD method, resulting in specimens having the same thermal history. A simulation procedure based on the implicit finite element method was developed for the theoretical study of the stress field evolution. The accuracy of the simulation was significantly improved by using experimentally obtained temperature-dependent mechanical properties of the DLD-processed Ti-6Al-4V alloy. The residual stress field in the buildup was experimentally measured by neutron diffraction. The stress-free lattice parameter, which is decisive for the measured stresses, was determined using both a plane stress approach and a force-momentum balance. The influence of the inhomogeneity of the residual stress field on the accuracy of the experimental measurement and the validation of the simulation procedure are analyzed and discussed. Based on the numerical results it was found that the non-uniformity of the through-thickness stress distribution reaches a maximum in the central cross-section, while at the buildup ends the stresses are distributed almost uniformly. The components of the principal stresses are tensile at the buildup ends near the substrate. Furthermore, the calculated equivalent plastic strain reaches 5.9% near the buildup end, where the deposited layers are completed, while the plastic strain is practically equal to the experimentally measured ductility of the DLD-processed alloy, which is 6.2%. The experimentally measured residual stresses obtained by the force-momentum balance and the plane stress approach differ slightly from each other.

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